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Home > products > Micron ISSI Samsung > PARALLEL Merrillchip Micron ISSI Samsung IC DRAM 4GBIT MT41K256M16TW-107 IT:P

PARALLEL Merrillchip Micron ISSI Samsung IC DRAM 4GBIT MT41K256M16TW-107 IT:P

Product Details

Place of Origin: USA

Brand Name: Micron

Model Number: MT41K256M16TW-107 IT:P

Payment & Shipping Terms

Minimum Order Quantity: 1

Price: 0.98-5.68/PC

Packaging Details: STANDRAD

Payment Terms: D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability: 10000PCS PER WEEK

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Merrillchip Micron ISSI Samsung

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Micron ISSI Samsung DRAM 4GBIT

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4GBIT mt41k256m16tw 107 it p

Product Category:
MICRON
Series:
MT41K256M16TW-107 IT:P
Mounting Style:
SMD/SMT
Package / Case:
TQFP-64
Core:
AVR
Program Memory Size:
16 KB
Data Bus Width:
8 Bit
ADC Resolution:
10 Bit
Maximum Clock Frequency:
16 MHz
Number Of I/Os:
54 I/O
Data RAM Size:
1 KB
Supply Voltage - Min:
1.8 V
Supply Voltage - Max:
5.5 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Packaging:
MouseReel
Brand:
Micron
Data RAM Type:
SRAM
Data ROM Size:
512 B
Product Category:
MICRON
Series:
MT41K256M16TW-107 IT:P
Mounting Style:
SMD/SMT
Package / Case:
TQFP-64
Core:
AVR
Program Memory Size:
16 KB
Data Bus Width:
8 Bit
ADC Resolution:
10 Bit
Maximum Clock Frequency:
16 MHz
Number Of I/Os:
54 I/O
Data RAM Size:
1 KB
Supply Voltage - Min:
1.8 V
Supply Voltage - Max:
5.5 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Packaging:
MouseReel
Brand:
Micron
Data RAM Type:
SRAM
Data ROM Size:
512 B
PARALLEL Merrillchip Micron ISSI Samsung IC DRAM 4GBIT MT41K256M16TW-107 IT:P

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MT41K256M16TW-107 IT:P
DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an
8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock cycle data transfer
at the internal DRAM core and eight corresponding n-bit-wide, one half-clock-cycle data transfers at the I/O pins. The
differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input
receiver. DQS is center-aligned with data for WRITEs.
Manufacturer:
Micron Technology
 
Product Category:
DRAM
 
RoHS:
Details
 
Type:
SDRAM - DDR3L
 
Mounting Style:
SMD/SMT
 
Package / Case:
FBGA-96
 
Data Bus Width:
16 bit
 
Organization:
256 M x 16
 
Memory Size:
4 Gbit
 
Maximum Clock Frequency:
933 MHz
 
Access Time:
20 ns
 
Supply Voltage - Max:
1.45 V
 
Supply Voltage - Min:
1.283 V
 
Supply Current - Max:
46 mA
 
Minimum Operating Temperature:
- 40 C
 
Maximum Operating Temperature:
+ 95 C
 
Series:
MT41K
 
Packaging:
Tray
 
Brand:
Micron
 
Moisture Sensitive:
Yes
 
Product Type:
DRAM
 
Factory Pack Quantity:
1224
 
Subcategory:
Memory & Data Storage
 
Unit Weight:
0.128468 oz
PARALLEL Merrillchip Micron ISSI Samsung IC DRAM 4GBIT MT41K256M16TW-107 IT:P 3

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FAQ

Q1:About the quotation of IC BOM?
A1:The company has the procurement channels of original integrated circuit manufacturers at home and abroad and a professional product solution analysis team to select high-quality, low-cost electronic components for customers.
Q2:Quotation for PCB and PCBA solutions?
A2: The company's professional team will analyze the application range of the PCB and PCBA solutions provided by the customer and the parameter requirements of each electronic component, and ultimately provide customers with high-quality and low-cost quotation solutions.
Q3:About chip design to finished product?
A3: We have a complete set of wafer design, wafer production, wafer testing, IC packaging and integration,and IC product inspection services.
Q4:Does our company have a minimum order quantity (MOQ) requirement?
A4: No, we do not have MOQ requirement, we can support your projects starting from prototypes to mass productions.
Q5:How to ensure that customer information is not leaked?
A5: We are willing to sign NDA effect by customer side local law and promising to keep customers data in high confidential level.
PARALLEL Merrillchip Micron ISSI Samsung IC DRAM 4GBIT MT41K256M16TW-107 IT:P 11