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J111,126

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Description: JFET N-CH 40V TO92-3

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Category:
Discrete Semiconductor Products Transistors JFETs
FET Type:
N-Channel
Product Status:
Obsolete
Voltage - Breakdown (V(BR)GSS):
40 V
Mounting Type:
Through Hole
Package:
Cut Tape (CT) Tape & Box (TB)
Series:
-
Current - Drain (Idss) @ Vds (Vgs=0):
20 MA @ 15 V
Mfr:
NXP USA Inc.
Voltage - Cutoff (VGS Off) @ Id:
10 V @ 1 µA
Supplier Device Package:
TO-92-3
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max:
400 MW
Input Capacitance (Ciss) (Max) @ Vds:
6pF @ 10V (VGS)
Resistance - RDS(On):
30 Ohms
Drain To Source Voltage (Vdss):
40 V
Base Product Number:
J111
Operating Temperature:
150°C (TJ)
Category:
Discrete Semiconductor Products Transistors JFETs
FET Type:
N-Channel
Product Status:
Obsolete
Voltage - Breakdown (V(BR)GSS):
40 V
Mounting Type:
Through Hole
Package:
Cut Tape (CT) Tape & Box (TB)
Series:
-
Current - Drain (Idss) @ Vds (Vgs=0):
20 MA @ 15 V
Mfr:
NXP USA Inc.
Voltage - Cutoff (VGS Off) @ Id:
10 V @ 1 µA
Supplier Device Package:
TO-92-3
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max:
400 MW
Input Capacitance (Ciss) (Max) @ Vds:
6pF @ 10V (VGS)
Resistance - RDS(On):
30 Ohms
Drain To Source Voltage (Vdss):
40 V
Base Product Number:
J111
Operating Temperature:
150°C (TJ)
J111,126
JFET N-Channel 40 V 400 mW Through Hole TO-92-3