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Home > products > Diode Triode Transistor > MQ2N2609
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MQ2N2609
MQ2N2609

MQ2N2609

Product Details

Payment & Shipping Terms

Description: JFET P-CH 30V TO18

Get Best Price

Product Details

Product Description
Highlight:
Category:
Discrete Semiconductor Products Transistors JFETs
FET Type:
P-Channel
Product Status:
Active
Voltage - Breakdown (V(BR)GSS):
30 V
Mounting Type:
Through Hole
Package:
Bulk
Series:
-
Current - Drain (Idss) @ Vds (Vgs=0):
2 MA @ 5 V
Mfr:
Microchip Technology
Voltage - Cutoff (VGS Off) @ Id:
750 MV @ 1 µA
Supplier Device Package:
TO-18 (TO-206AA)
Package / Case:
TO-206AA, TO-18-3 Metal Can
Operating Temperature:
-65°C ~ 200°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
10pF @ 5V
Power - Max:
300 MW
Drain To Source Voltage (Vdss):
30 V
Category:
Discrete Semiconductor Products Transistors JFETs
FET Type:
P-Channel
Product Status:
Active
Voltage - Breakdown (V(BR)GSS):
30 V
Mounting Type:
Through Hole
Package:
Bulk
Series:
-
Current - Drain (Idss) @ Vds (Vgs=0):
2 MA @ 5 V
Mfr:
Microchip Technology
Voltage - Cutoff (VGS Off) @ Id:
750 MV @ 1 µA
Supplier Device Package:
TO-18 (TO-206AA)
Package / Case:
TO-206AA, TO-18-3 Metal Can
Operating Temperature:
-65°C ~ 200°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
10pF @ 5V
Power - Max:
300 MW
Drain To Source Voltage (Vdss):
30 V
MQ2N2609
JFET P-Channel 30 V 300 mW Through Hole TO-18 (TO-206AA)

Tags:

IRFP90N20D Diode Triode Transistor,

Diode Triode Transistor Through Hole Mounting,

200V 50A Diode Triode Transistor

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