Category: |
Discrete Semiconductor Products
Transistors
JFETs |
FET Type: |
N-Channel |
Product Status: |
Active |
Voltage - Breakdown (V(BR)GSS): |
35 V |
Mounting Type: |
Through Hole |
Package: |
Bag |
Series: |
- |
Current - Drain (Idss) @ Vds (Vgs=0): |
2 MA @ 15 V |
Mfr: |
NTE Electronics, Inc |
Supplier Device Package: |
TO-92 |
Package / Case: |
TO-226-3, TO-92-3 (TO-226AA) |
Power - Max: |
625 MW |
Input Capacitance (Ciss) (Max) @ Vds: |
5pF @ 10V |
Resistance - RDS(On): |
100 Ohms |
Drain To Source Voltage (Vdss): |
35 V |
Operating Temperature: |
-55°C ~ 150°C (TJ) |
Category: |
Discrete Semiconductor Products
Transistors
JFETs |
FET Type: |
N-Channel |
Product Status: |
Active |
Voltage - Breakdown (V(BR)GSS): |
35 V |
Mounting Type: |
Through Hole |
Package: |
Bag |
Series: |
- |
Current - Drain (Idss) @ Vds (Vgs=0): |
2 MA @ 15 V |
Mfr: |
NTE Electronics, Inc |
Supplier Device Package: |
TO-92 |
Package / Case: |
TO-226-3, TO-92-3 (TO-226AA) |
Power - Max: |
625 MW |
Input Capacitance (Ciss) (Max) @ Vds: |
5pF @ 10V |
Resistance - RDS(On): |
100 Ohms |
Drain To Source Voltage (Vdss): |
35 V |
Operating Temperature: |
-55°C ~ 150°C (TJ) |