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MQ2N5114

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Description: JFET P-CH 30V TO18

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Category:
Discrete Semiconductor Products Transistors JFETs
FET Type:
P-Channel
Product Status:
Active
Voltage - Breakdown (V(BR)GSS):
30 V
Mounting Type:
Through Hole
Package:
Bulk
Series:
Military, MIL-PRF-19500
Current - Drain (Idss) @ Vds (Vgs=0):
30 MA @ 18 V
Mfr:
Microchip Technology
Voltage - Cutoff (VGS Off) @ Id:
10 V @ 1 NA
Supplier Device Package:
TO-18 (TO-206AA)
Package / Case:
TO-206AA, TO-18-3 Metal Can
Power - Max:
500 MW
Input Capacitance (Ciss) (Max) @ Vds:
25pF @ 15V
Resistance - RDS(On):
75 Ohms
Drain To Source Voltage (Vdss):
30 V
Operating Temperature:
-65°C ~ 200°C (TJ)
Category:
Discrete Semiconductor Products Transistors JFETs
FET Type:
P-Channel
Product Status:
Active
Voltage - Breakdown (V(BR)GSS):
30 V
Mounting Type:
Through Hole
Package:
Bulk
Series:
Military, MIL-PRF-19500
Current - Drain (Idss) @ Vds (Vgs=0):
30 MA @ 18 V
Mfr:
Microchip Technology
Voltage - Cutoff (VGS Off) @ Id:
10 V @ 1 NA
Supplier Device Package:
TO-18 (TO-206AA)
Package / Case:
TO-206AA, TO-18-3 Metal Can
Power - Max:
500 MW
Input Capacitance (Ciss) (Max) @ Vds:
25pF @ 15V
Resistance - RDS(On):
75 Ohms
Drain To Source Voltage (Vdss):
30 V
Operating Temperature:
-65°C ~ 200°C (TJ)
MQ2N5114
JFET P-Channel 30 V 500 mW Through Hole TO-18 (TO-206AA)