Category: |
Discrete Semiconductor Products
Transistors
JFETs |
FET Type: |
N-Channel |
Product Status: |
Obsolete |
Voltage - Breakdown (V(BR)GSS): |
25 V |
Mounting Type: |
Through Hole |
Package: |
Tape & Box (TB) |
Series: |
- |
Current - Drain (Idss) @ Vds (Vgs=0): |
80 MA @ 5 V |
Mfr: |
NXP USA Inc. |
Voltage - Cutoff (VGS Off) @ Id: |
10 V @ 1 µA |
Supplier Device Package: |
TO-92-3 |
Package / Case: |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Power - Max: |
400 MW |
Input Capacitance (Ciss) (Max) @ Vds: |
30pF @ 0V |
Resistance - RDS(On): |
8 Ohms |
Drain To Source Voltage (Vdss): |
25 V |
Base Product Number: |
J108 |
Operating Temperature: |
150°C (TJ) |
Category: |
Discrete Semiconductor Products
Transistors
JFETs |
FET Type: |
N-Channel |
Product Status: |
Obsolete |
Voltage - Breakdown (V(BR)GSS): |
25 V |
Mounting Type: |
Through Hole |
Package: |
Tape & Box (TB) |
Series: |
- |
Current - Drain (Idss) @ Vds (Vgs=0): |
80 MA @ 5 V |
Mfr: |
NXP USA Inc. |
Voltage - Cutoff (VGS Off) @ Id: |
10 V @ 1 µA |
Supplier Device Package: |
TO-92-3 |
Package / Case: |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Power - Max: |
400 MW |
Input Capacitance (Ciss) (Max) @ Vds: |
30pF @ 0V |
Resistance - RDS(On): |
8 Ohms |
Drain To Source Voltage (Vdss): |
25 V |
Base Product Number: |
J108 |
Operating Temperature: |
150°C (TJ) |