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Description: PM-DIODE-SIC-SBD-D1P
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays | Product Status: | Active | Current - Average Rectified (Io) (per Diode): | 200A | Operating Temperature - Junction: | -40°C ~ 175°C | Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 200 A | Package: | Box | Series: | - | Diode Configuration: | 1 Pair Common Cathode | Supplier Device Package: | D1P | Reverse Recovery Time (trr): | 0 Ns | Mfr: | Microchip Technology | Technology: | SiC (Silicon Carbide) Schottky | Package / Case: | Module | Voltage - DC Reverse (Vr) (Max): | 1200 V | Mounting Type: | Chassis Mount | Speed: | No Recovery Time > 500mA (Io) | Base Product Number: | MSCDC200 | Current - Reverse Leakage @ Vr: | 800 µA @ 1200 V | 
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays | 
| Product Status: | Active | 
| Current - Average Rectified (Io) (per Diode): | 200A | 
| Operating Temperature - Junction: | -40°C ~ 175°C | 
| Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 200 A | 
| Package: | Box | 
| Series: | - | 
| Diode Configuration: | 1 Pair Common Cathode | 
| Supplier Device Package: | D1P | 
| Reverse Recovery Time (trr): | 0 Ns | 
| Mfr: | Microchip Technology | 
| Technology: | SiC (Silicon Carbide) Schottky | 
| Package / Case: | Module | 
| Voltage - DC Reverse (Vr) (Max): | 1200 V | 
| Mounting Type: | Chassis Mount | 
| Speed: | No Recovery Time > 500mA (Io) | 
| Base Product Number: | MSCDC200 | 
| Current - Reverse Leakage @ Vr: | 800 µA @ 1200 V |