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Home > products > Electronic Components ICs > VS-10ETF10FP-M3

VS-10ETF10FP-M3

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Description: DIODE GP 1KV 10A TO220-2FP

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 1000 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.33 V @ 10 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-220-2 Full Pack
Reverse Recovery Time (trr):
310 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-40°C ~ 150°C
Package / Case:
TO-220-2 Full Pack
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
10A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
10ETF10
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 1000 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.33 V @ 10 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-220-2 Full Pack
Reverse Recovery Time (trr):
310 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-40°C ~ 150°C
Package / Case:
TO-220-2 Full Pack
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
10A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
10ETF10
VS-10ETF10FP-M3
Diode 1000 V 10A Through Hole TO-220-2 Full Pack