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E4D20120G

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Description: DIODE SIL CARB 1.2KV 56A TO263-2

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
200 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 20 A
Package:
Tube
Series:
E-Series, Automotive
Capacitance @ Vr, F:
1474pF @ 0V, 1MHz
Supplier Device Package:
TO-263-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
Wolfspeed, Inc.
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
56A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
E4D20120
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
200 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 20 A
Package:
Tube
Series:
E-Series, Automotive
Capacitance @ Vr, F:
1474pF @ 0V, 1MHz
Supplier Device Package:
TO-263-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
Wolfspeed, Inc.
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
56A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
E4D20120
E4D20120G
Diode 1200 V 56A Surface Mount TO-263-2