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Home > products > Electronic Components ICs > IDH08G120C5XKSA1

IDH08G120C5XKSA1

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Description: DIODE SIL CARB 1.2KV 8A TO220-1

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
40 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.95 V @ 8 A
Package:
Tube
Series:
CoolSiC™+
Capacitance @ Vr, F:
365pF @ 1V, 1MHz
Supplier Device Package:
PG-TO220-2-1
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
8A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDH08G120
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
40 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.95 V @ 8 A
Package:
Tube
Series:
CoolSiC™+
Capacitance @ Vr, F:
365pF @ 1V, 1MHz
Supplier Device Package:
PG-TO220-2-1
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
8A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDH08G120
IDH08G120C5XKSA1
Diode 1200 V 8A Through Hole PG-TO220-2-1