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IDWD15G120C5XKSA1

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Description: DIODE SIL CARB 1.2KV 49A TO247-2

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
124 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.65 V @ 15 A
Package:
Tube
Series:
CoolSiC™+
Capacitance @ Vr, F:
1050pF @ 1V, 1MHz
Supplier Device Package:
PG-TO247-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
49A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDWD15
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
124 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.65 V @ 15 A
Package:
Tube
Series:
CoolSiC™+
Capacitance @ Vr, F:
1050pF @ 1V, 1MHz
Supplier Device Package:
PG-TO247-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
49A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDWD15
IDWD15G120C5XKSA1
Diode 1200 V 49A Through Hole PG-TO247-2