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Description: DIODE GEN PURP 800V 4A TO277A
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
10 µA @ 800 V |
Mounting Type: |
Surface Mount |
Voltage - Forward (Vf) (Max) @ If: |
1.1 V @ 4 A |
Package: |
Tape & Reel (TR) |
Series: |
ESMP® |
Capacitance @ Vr, F: |
30pF @ 4V, 1MHz |
Supplier Device Package: |
TO-277A (SMPC) |
Reverse Recovery Time (trr): |
2.5 µs |
Mfr: |
Vishay General Semiconductor - Diodes Division |
Technology: |
Standard |
Operating Temperature - Junction: |
-55°C ~ 150°C |
Package / Case: |
TO-277, 3-PowerDFN |
Voltage - DC Reverse (Vr) (Max): |
800 V |
Current - Average Rectified (Io): |
4A |
Speed: |
Standard Recovery >500ns, > 200mA (Io) |
Base Product Number: |
S4P |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
10 µA @ 800 V |
Mounting Type: |
Surface Mount |
Voltage - Forward (Vf) (Max) @ If: |
1.1 V @ 4 A |
Package: |
Tape & Reel (TR) |
Series: |
ESMP® |
Capacitance @ Vr, F: |
30pF @ 4V, 1MHz |
Supplier Device Package: |
TO-277A (SMPC) |
Reverse Recovery Time (trr): |
2.5 µs |
Mfr: |
Vishay General Semiconductor - Diodes Division |
Technology: |
Standard |
Operating Temperature - Junction: |
-55°C ~ 150°C |
Package / Case: |
TO-277, 3-PowerDFN |
Voltage - DC Reverse (Vr) (Max): |
800 V |
Current - Average Rectified (Io): |
4A |
Speed: |
Standard Recovery >500ns, > 200mA (Io) |
Base Product Number: |
S4P |