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Description: SIC SCHOTTKY DIODE 650V 4A 3-PIN
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays |
Product Status: |
Active |
Current - Average Rectified (Io) (per Diode): |
95A (DC) |
Operating Temperature - Junction: |
-55°C ~ 175°C |
Voltage - Forward (Vf) (Max) @ If: |
1.7 V @ 30 A |
Package: |
Cut Tape (CT)
Tape & Box (TB) |
Series: |
- |
Diode Configuration: |
1 Pair Common Cathode |
Supplier Device Package: |
TO-247AB |
Reverse Recovery Time (trr): |
0 Ns |
Mfr: |
Global Power Technology-GPT |
Technology: |
SiC (Silicon Carbide) Schottky |
Package / Case: |
TO-247-3 |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Mounting Type: |
Through Hole |
Speed: |
No Recovery Time > 500mA (Io) |
Current - Reverse Leakage @ Vr: |
50 µA @ 650 V |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays |
Product Status: |
Active |
Current - Average Rectified (Io) (per Diode): |
95A (DC) |
Operating Temperature - Junction: |
-55°C ~ 175°C |
Voltage - Forward (Vf) (Max) @ If: |
1.7 V @ 30 A |
Package: |
Cut Tape (CT)
Tape & Box (TB) |
Series: |
- |
Diode Configuration: |
1 Pair Common Cathode |
Supplier Device Package: |
TO-247AB |
Reverse Recovery Time (trr): |
0 Ns |
Mfr: |
Global Power Technology-GPT |
Technology: |
SiC (Silicon Carbide) Schottky |
Package / Case: |
TO-247-3 |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Mounting Type: |
Through Hole |
Speed: |
No Recovery Time > 500mA (Io) |
Current - Reverse Leakage @ Vr: |
50 µA @ 650 V |