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G3S12004B

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Description: SIC SCHOTTKY DIODE 1200V 4A 3-PI

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Category:
Discrete Semiconductor Products Diodes Rectifiers Diode Arrays
Product Status:
Active
Current - Average Rectified (Io) (per Diode):
8.5A (DC)
Operating Temperature - Junction:
-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 2 A
Package:
Cut Tape (CT) Tape & Box (TB)
Series:
-
Diode Configuration:
1 Pair Common Cathode
Supplier Device Package:
TO-247AB
Reverse Recovery Time (trr):
0 Ns
Mfr:
Global Power Technology-GPT
Technology:
SiC (Silicon Carbide) Schottky
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
1200 V
Mounting Type:
Through Hole
Speed:
No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr:
50 µA @ 1200 V
Category:
Discrete Semiconductor Products Diodes Rectifiers Diode Arrays
Product Status:
Active
Current - Average Rectified (Io) (per Diode):
8.5A (DC)
Operating Temperature - Junction:
-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 2 A
Package:
Cut Tape (CT) Tape & Box (TB)
Series:
-
Diode Configuration:
1 Pair Common Cathode
Supplier Device Package:
TO-247AB
Reverse Recovery Time (trr):
0 Ns
Mfr:
Global Power Technology-GPT
Technology:
SiC (Silicon Carbide) Schottky
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
1200 V
Mounting Type:
Through Hole
Speed:
No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr:
50 µA @ 1200 V
G3S12004B
Diode Array 1 Pair Common Cathode 1200 V 8.5A (DC) Through Hole TO-247-3