Product Details
Payment & Shipping Terms
Description: SIC SCHOTTKY DIODE 1200V 10A 3-P
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays | Product Status: | Active | Current - Average Rectified (Io) (per Diode): | 39A (DC) | Operating Temperature - Junction: | -55°C ~ 175°C | Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 5 A | Package: | Cut Tape (CT)
Tape & Box (TB) | Series: | - | Diode Configuration: | 1 Pair Common Cathode | Supplier Device Package: | TO-247AB | Reverse Recovery Time (trr): | 0 Ns | Mfr: | Global Power Technology-GPT | Technology: | SiC (Silicon Carbide) Schottky | Package / Case: | TO-247-3 | Voltage - DC Reverse (Vr) (Max): | 1200 V | Mounting Type: | Through Hole | Speed: | No Recovery Time > 500mA (Io) | Current - Reverse Leakage @ Vr: | 50 µA @ 1200 V | 
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Diode Arrays | 
| Product Status: | Active | 
| Current - Average Rectified (Io) (per Diode): | 39A (DC) | 
| Operating Temperature - Junction: | -55°C ~ 175°C | 
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 5 A | 
| Package: | Cut Tape (CT)
Tape & Box (TB) | 
| Series: | - | 
| Diode Configuration: | 1 Pair Common Cathode | 
| Supplier Device Package: | TO-247AB | 
| Reverse Recovery Time (trr): | 0 Ns | 
| Mfr: | Global Power Technology-GPT | 
| Technology: | SiC (Silicon Carbide) Schottky | 
| Package / Case: | TO-247-3 | 
| Voltage - DC Reverse (Vr) (Max): | 1200 V | 
| Mounting Type: | Through Hole | 
| Speed: | No Recovery Time > 500mA (Io) | 
| Current - Reverse Leakage @ Vr: | 50 µA @ 1200 V |