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AIDW40S65C5XKSA1

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Description: DIODE SIL CARB 650V 40A TO247-3

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Last Time Buy
Current - Reverse Leakage @ Vr:
120 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 40 A
Package:
Tube
Series:
Automotive, AEC-Q100/101, CoolSiC™
Capacitance @ Vr, F:
1138pF @ 1V, 1MHz
Supplier Device Package:
PG-TO247-3-41
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-40°C ~ 175°C
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
40A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
AIDW40
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Last Time Buy
Current - Reverse Leakage @ Vr:
120 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 40 A
Package:
Tube
Series:
Automotive, AEC-Q100/101, CoolSiC™
Capacitance @ Vr, F:
1138pF @ 1V, 1MHz
Supplier Device Package:
PG-TO247-3-41
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-40°C ~ 175°C
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
40A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
AIDW40
AIDW40S65C5XKSA1
Diode 650 V 40A Through Hole PG-TO247-3-41