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Description: DIODE SIL CARB 1.2KV 38A TO252-2
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
62 µA @ 12 V |
Mounting Type: |
Surface Mount |
Voltage - Forward (Vf) (Max) @ If: |
1.8 V @ 10 A |
Package: |
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel® |
Series: |
CoolSiC™+ |
Capacitance @ Vr, F: |
29pF @ 800V, 1MHz |
Supplier Device Package: |
PG-TO252-2 |
Reverse Recovery Time (trr): |
0 Ns |
Mfr: |
Infineon Technologies |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-55°C ~ 150°C |
Package / Case: |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voltage - DC Reverse (Vr) (Max): |
1200 V |
Current - Average Rectified (Io): |
38A |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
IDM10G120 |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
62 µA @ 12 V |
Mounting Type: |
Surface Mount |
Voltage - Forward (Vf) (Max) @ If: |
1.8 V @ 10 A |
Package: |
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel® |
Series: |
CoolSiC™+ |
Capacitance @ Vr, F: |
29pF @ 800V, 1MHz |
Supplier Device Package: |
PG-TO252-2 |
Reverse Recovery Time (trr): |
0 Ns |
Mfr: |
Infineon Technologies |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-55°C ~ 150°C |
Package / Case: |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voltage - DC Reverse (Vr) (Max): |
1200 V |
Current - Average Rectified (Io): |
38A |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
IDM10G120 |