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TRS12E65F,S1Q

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Description: DIODE SIL CARB 650V 12A TO220-2L

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
90 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 12 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
65pF @ 650V, 1MHz
Supplier Device Package:
TO-220-2L
Reverse Recovery Time (trr):
0 Ns
Mfr:
Toshiba Semiconductor And Storage
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
TRS12E65
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
90 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 12 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
65pF @ 650V, 1MHz
Supplier Device Package:
TO-220-2L
Reverse Recovery Time (trr):
0 Ns
Mfr:
Toshiba Semiconductor And Storage
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
TRS12E65
TRS12E65F,S1Q
Diode 650 V 12A Through Hole TO-220-2L