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IDT08S60C

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Description: DIODE SIL CARB 600V 8A TO220-2

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
310pF @ 1V, 1MHz
Supplier Device Package:
PG-TO220-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Speed:
No Recovery Time > 500mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
310pF @ 1V, 1MHz
Supplier Device Package:
PG-TO220-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Speed:
No Recovery Time > 500mA (Io)
IDT08S60C
Diode 600 V 8A Through Hole PG-TO220-2