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NXPSC10650X6Q

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Description: DIODE SIL CARB 650V 10A TO220F

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Last Time Buy
Current - Reverse Leakage @ Vr:
250 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
300pF @ 1V, 1MHz
Supplier Device Package:
TO-220F
Reverse Recovery Time (trr):
0 Ns
Mfr:
WeEn Semiconductors
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2 Full Pack, Isolated Tab
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
NXPSC
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Last Time Buy
Current - Reverse Leakage @ Vr:
250 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
300pF @ 1V, 1MHz
Supplier Device Package:
TO-220F
Reverse Recovery Time (trr):
0 Ns
Mfr:
WeEn Semiconductors
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2 Full Pack, Isolated Tab
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
NXPSC
NXPSC10650X6Q
Diode 650 V 10A Through Hole TO-220F