logo
ShenZhen QingFengYuan Technology Co.,Ltd.
products
products
Home > products > Electronic Components ICs > FESB16JT-E3/45

FESB16JT-E3/45

Product Details

Payment & Shipping Terms

Description: DIODE GEN PURP 600V 16A TO263AB

Get Best Price
Highlight:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
10 µA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 16 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
145pF @ 4V, 1MHz
Supplier Device Package:
TO-263AB (D²PAK)
Reverse Recovery Time (trr):
50 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
16A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
FESB16
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
10 µA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 16 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
145pF @ 4V, 1MHz
Supplier Device Package:
TO-263AB (D²PAK)
Reverse Recovery Time (trr):
50 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
16A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
FESB16
FESB16JT-E3/45
Diode 600 V 16A Surface Mount TO-263AB (D²PAK)