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CDBJSC3650-G

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Description: DIODE SIL CARBIDE 650V 3A TO220F

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 3 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
190pF @ 0V, 1MHz
Supplier Device Package:
TO-220F
Reverse Recovery Time (trr):
0 Ns
Mfr:
Comchip Technology
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2 Full Pack
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
3A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
CDBJSC3650
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 3 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
190pF @ 0V, 1MHz
Supplier Device Package:
TO-220F
Reverse Recovery Time (trr):
0 Ns
Mfr:
Comchip Technology
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2 Full Pack
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
3A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
CDBJSC3650
CDBJSC3650-G
Diode 650 V 3A Through Hole TO-220F