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GD10MPS12A

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Description: DIODE SIL CARB 1.2KV 25A TO220-2

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Package:
Tube
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
367pF @ 1V, 1MHz
Supplier Device Package:
TO-220-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
25A
Speed:
No Recovery Time > 500mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Package:
Tube
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
367pF @ 1V, 1MHz
Supplier Device Package:
TO-220-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
25A
Speed:
No Recovery Time > 500mA (Io)
GD10MPS12A
Diode 1200 V 25A Through Hole TO-220-2