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GD60MPS06H

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Description: DIODE SIL CARB 650V 82A TO247-2

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
10 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 60 A
Package:
Tube
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
1463pF @ 1V, 1MHz
Supplier Device Package:
TO-247-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
82A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GD60
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
10 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 60 A
Package:
Tube
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
1463pF @ 1V, 1MHz
Supplier Device Package:
TO-247-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
82A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GD60
GD60MPS06H
Diode 650 V 82A Through Hole TO-247-2