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GB02SHT03-46

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Description: DIODE SIL CARBIDE 300V 4A TO46

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 300 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 1 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
76pF @ 1V, 1MHz
Supplier Device Package:
TO-46
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 225°C
Package / Case:
TO-206AB, TO-46-3 Metal Can
Voltage - DC Reverse (Vr) (Max):
300 V
Current - Average Rectified (Io):
4A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GB02SHT03
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 300 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 1 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
76pF @ 1V, 1MHz
Supplier Device Package:
TO-46
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 225°C
Package / Case:
TO-206AB, TO-46-3 Metal Can
Voltage - DC Reverse (Vr) (Max):
300 V
Current - Average Rectified (Io):
4A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GB02SHT03
GB02SHT03-46
Diode 300 V 4A Through Hole TO-46