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Description: DIODE SIL CARBIDE 300V 4A TO46
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes | Product Status: | Active | Current - Reverse Leakage @ Vr: | 5 µA @ 300 V | Mounting Type: | Through Hole | Voltage - Forward (Vf) (Max) @ If: | 1.6 V @ 1 A | Package: | Bulk | Series: | - | Capacitance @ Vr, F: | 76pF @ 1V, 1MHz | Supplier Device Package: | TO-46 | Reverse Recovery Time (trr): | 0 Ns | Mfr: | GeneSiC Semiconductor | Technology: | SiC (Silicon Carbide) Schottky | Operating Temperature - Junction: | -55°C ~ 225°C | Package / Case: | TO-206AB, TO-46-3 Metal Can | Voltage - DC Reverse (Vr) (Max): | 300 V | Current - Average Rectified (Io): | 4A | Speed: | No Recovery Time > 500mA (Io) | Base Product Number: | GB02SHT03 | 
| Category: | Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes | 
| Product Status: | Active | 
| Current - Reverse Leakage @ Vr: | 5 µA @ 300 V | 
| Mounting Type: | Through Hole | 
| Voltage - Forward (Vf) (Max) @ If: | 1.6 V @ 1 A | 
| Package: | Bulk | 
| Series: | - | 
| Capacitance @ Vr, F: | 76pF @ 1V, 1MHz | 
| Supplier Device Package: | TO-46 | 
| Reverse Recovery Time (trr): | 0 Ns | 
| Mfr: | GeneSiC Semiconductor | 
| Technology: | SiC (Silicon Carbide) Schottky | 
| Operating Temperature - Junction: | -55°C ~ 225°C | 
| Package / Case: | TO-206AB, TO-46-3 Metal Can | 
| Voltage - DC Reverse (Vr) (Max): | 300 V | 
| Current - Average Rectified (Io): | 4A | 
| Speed: | No Recovery Time > 500mA (Io) | 
| Base Product Number: | GB02SHT03 |