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GAP3SLT33-220FP

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Description: DIODE SIC 3.3KV 300MA TO220FP

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Not For New Designs
Current - Reverse Leakage @ Vr:
5 µA @ 3300 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 300 MA
Package:
Tube
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
42pF @ 1V, 1MHz
Supplier Device Package:
TO-220FP
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2 Full Pack
Voltage - DC Reverse (Vr) (Max):
3300 V
Current - Average Rectified (Io):
300mA
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GAP3SLT33
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Not For New Designs
Current - Reverse Leakage @ Vr:
5 µA @ 3300 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 300 MA
Package:
Tube
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
42pF @ 1V, 1MHz
Supplier Device Package:
TO-220FP
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2 Full Pack
Voltage - DC Reverse (Vr) (Max):
3300 V
Current - Average Rectified (Io):
300mA
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GAP3SLT33
GAP3SLT33-220FP
Diode 3300 V 300mA Through Hole TO-220FP