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Home > products > Electronic Components ICs > VS-E5TH0812THN3

VS-E5TH0812THN3

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Description: DIODE GEN PURP 1.2KV 8A TO220AC

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
50 µA @ 1000 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
2.5 V @ 8 A
Package:
Tube
Series:
Automotive, AEC-Q101
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-220AC
Reverse Recovery Time (trr):
60 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
8A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
50 µA @ 1000 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
2.5 V @ 8 A
Package:
Tube
Series:
Automotive, AEC-Q101
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-220AC
Reverse Recovery Time (trr):
60 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
8A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
VS-E5TH0812THN3
Diode 1200 V 8A Through Hole TO-220AC