logo
ShenZhen QingFengYuan Technology Co.,Ltd.
products
products

JAN1N5807/TR

Product Details

Payment & Shipping Terms

Description: DIODE GEN PURP 50V 6A

Get Best Price
Highlight:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 50 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
875 MV @ 4 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/477
Capacitance @ Vr, F:
60pF @ 10V, 1MHz
Supplier Device Package:
B, Axial
Reverse Recovery Time (trr):
30 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
B, Axial
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
6A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 50 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
875 MV @ 4 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/477
Capacitance @ Vr, F:
60pF @ 10V, 1MHz
Supplier Device Package:
B, Axial
Reverse Recovery Time (trr):
30 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
B, Axial
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
6A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
JAN1N5807/TR
Diode 50 V 6A Through Hole B, Axial