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MNS1N5806US

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Description: DIODE GEN PURP 160V 1A A SQ-MELF

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 150 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
875 MV @ 1 A
Package:
Bulk
Series:
MIL-PRF-19500/477
Capacitance @ Vr, F:
25pF @ 10V, 1MHz
Supplier Device Package:
A, SQ-MELF
Reverse Recovery Time (trr):
25 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, A
Voltage - DC Reverse (Vr) (Max):
160 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
1 µA @ 150 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
875 MV @ 1 A
Package:
Bulk
Series:
MIL-PRF-19500/477
Capacitance @ Vr, F:
25pF @ 10V, 1MHz
Supplier Device Package:
A, SQ-MELF
Reverse Recovery Time (trr):
25 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, A
Voltage - DC Reverse (Vr) (Max):
160 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
MNS1N5806US
Diode 160 V 1A Surface Mount A, SQ-MELF