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1N6631E3/TR

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Description: DIODE GP REV 1.1KV 1.4A E AXIAL

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
4 µA @ 1100 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 1.4 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
40pF @ 10V, 1MHz
Supplier Device Package:
E, Axial
Reverse Recovery Time (trr):
80 Ns
Mfr:
Microchip Technology
Technology:
Standard, Reverse Polarity
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
E, Axial
Voltage - DC Reverse (Vr) (Max):
1100 V
Current - Average Rectified (Io):
1.4A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
4 µA @ 1100 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 1.4 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
40pF @ 10V, 1MHz
Supplier Device Package:
E, Axial
Reverse Recovery Time (trr):
80 Ns
Mfr:
Microchip Technology
Technology:
Standard, Reverse Polarity
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
E, Axial
Voltage - DC Reverse (Vr) (Max):
1100 V
Current - Average Rectified (Io):
1.4A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
1N6631E3/TR
Diode 1100 V 1.4A Through Hole E, Axial