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JANTX1N6622US

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Description: DIODE GEN PURP 660V 2A D-5A

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 NA @ 660 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1.2 A
Package:
Bulk
Series:
Military, MIL-PRF-19500/585
Capacitance @ Vr, F:
10pF @ 10V, 1MHz
Supplier Device Package:
D-5A
Reverse Recovery Time (trr):
30 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, A
Voltage - DC Reverse (Vr) (Max):
660 V
Current - Average Rectified (Io):
2A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
1N6622
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 NA @ 660 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1.2 A
Package:
Bulk
Series:
Military, MIL-PRF-19500/585
Capacitance @ Vr, F:
10pF @ 10V, 1MHz
Supplier Device Package:
D-5A
Reverse Recovery Time (trr):
30 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, A
Voltage - DC Reverse (Vr) (Max):
660 V
Current - Average Rectified (Io):
2A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
1N6622
JANTX1N6622US
Diode 660 V 2A Surface Mount D-5A