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JANTXV1N5807

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Description: DIODE GEN PURP 50V 3A AXIAL

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 50 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
875 MV @ 4 A
Package:
Bulk
Series:
Military, MIL-PRF-19500/477
Capacitance @ Vr, F:
65pF @ 10V, 1MHz
Supplier Device Package:
B, Axial
Reverse Recovery Time (trr):
30 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
B, Axial
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
3A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
1N5807
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 50 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
875 MV @ 4 A
Package:
Bulk
Series:
Military, MIL-PRF-19500/477
Capacitance @ Vr, F:
65pF @ 10V, 1MHz
Supplier Device Package:
B, Axial
Reverse Recovery Time (trr):
30 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
B, Axial
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
3A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
1N5807
JANTXV1N5807
Diode 50 V 3A Through Hole B, Axial