logo
ShenZhen QingFengYuan Technology Co.,Ltd.
products
products
Home > products > Electronic Components ICs > JANTXV1N6622U/TR

JANTXV1N6622U/TR

Product Details

Payment & Shipping Terms

Description: DIODE GP REV 660V 1.2A A SQ-MELF

Get Best Price
Highlight:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 NA @ 660 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1.2 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/585
Capacitance @ Vr, F:
-
Supplier Device Package:
A, SQ-MELF
Reverse Recovery Time (trr):
45 Ns
Mfr:
Microchip Technology
Technology:
Standard, Reverse Polarity
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, A
Voltage - DC Reverse (Vr) (Max):
660 V
Current - Average Rectified (Io):
1.2A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 NA @ 660 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1.2 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/585
Capacitance @ Vr, F:
-
Supplier Device Package:
A, SQ-MELF
Reverse Recovery Time (trr):
45 Ns
Mfr:
Microchip Technology
Technology:
Standard, Reverse Polarity
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, A
Voltage - DC Reverse (Vr) (Max):
660 V
Current - Average Rectified (Io):
1.2A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
JANTXV1N6622U/TR
Diode 660 V 1.2A Surface Mount A, SQ-MELF