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JAN1N6628US

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Description: DIODE GEN PURP 660V 1.75A D-5B

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
2 µA @ 660 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.35 V @ 2 A
Package:
Bulk
Series:
Military, MIL-PRF-19500/590
Capacitance @ Vr, F:
40pF @ 10V, 1MHz
Supplier Device Package:
D-5B
Reverse Recovery Time (trr):
30 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, E
Voltage - DC Reverse (Vr) (Max):
660 V
Current - Average Rectified (Io):
1.75A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
1N6628
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
2 µA @ 660 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.35 V @ 2 A
Package:
Bulk
Series:
Military, MIL-PRF-19500/590
Capacitance @ Vr, F:
40pF @ 10V, 1MHz
Supplier Device Package:
D-5B
Reverse Recovery Time (trr):
30 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, E
Voltage - DC Reverse (Vr) (Max):
660 V
Current - Average Rectified (Io):
1.75A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
1N6628
JAN1N6628US
Diode 660 V 1.75A Surface Mount D-5B