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JAN1N6630U/TR

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Description: DIODE GP REV 990V 1.4A SQ-MELF B

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
2 µA @ 990 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1.4 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/590
Capacitance @ Vr, F:
40pF @ 10V, 1MHz
Supplier Device Package:
B, SQ-MELF
Reverse Recovery Time (trr):
60 Ns
Mfr:
Microchip Technology
Technology:
Standard, Reverse Polarity
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, B
Voltage - DC Reverse (Vr) (Max):
990 V
Current - Average Rectified (Io):
1.4A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
2 µA @ 990 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1.4 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/590
Capacitance @ Vr, F:
40pF @ 10V, 1MHz
Supplier Device Package:
B, SQ-MELF
Reverse Recovery Time (trr):
60 Ns
Mfr:
Microchip Technology
Technology:
Standard, Reverse Polarity
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, B
Voltage - DC Reverse (Vr) (Max):
990 V
Current - Average Rectified (Io):
1.4A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
JAN1N6630U/TR
Diode 990 V 1.4A Surface Mount B, SQ-MELF