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JAN1N6081/TR

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Description: DIODE GEN PURP 150V 2A G AXIAL

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Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
10 µA @ 150 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 37.7 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/503
Capacitance @ Vr, F:
-
Supplier Device Package:
G, Axial
Reverse Recovery Time (trr):
30 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 155°C
Package / Case:
G, Axial
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
2A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
10 µA @ 150 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 37.7 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/503
Capacitance @ Vr, F:
-
Supplier Device Package:
G, Axial
Reverse Recovery Time (trr):
30 Ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 155°C
Package / Case:
G, Axial
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
2A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
JAN1N6081/TR
Diode 150 V 2A Through Hole G, Axial