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The BUK9K35-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.

Name: The BUK9K35-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
Brand: ShenZhen QingFengYuan Technology Co.,Ltd.
SKU: BUK9K35-60E,115
Price: 4.03 USD
Availability: InStock

Product Details

Brand Name: NEXPERIA

Model Number: BUK9K35-60E,115

Payment & Shipping Terms

Packaging Details: The goods will be packed in carton which wrapped all by adhesive tape. In order to lower the freight cost, the volumn of the carton will be compressed without hurting the goods.

Supply Ability: 50000 Piece/Pieces per Week

Get Best Price

Product Details

Product Description

Highlight: 
                                                                                                                                                                                                                                                                                                                                                                                                                                                dual logic-level N-channel MOSFET, TrenchMOS technology MOSFET, LFPAK56D automotive MOSFET
                              

Product Model:	BUK9K35-60E,115	Quantity:	2 N-channel
Drain-Source Voltage (Vdss):	60V	Continuous Drain Current (Id):	22A
On-Resistance (RDS(on)):	35mΩ@5V	Power Dissipation (Pd):	38W
Threshold Voltage (Vgs(th)):	2.1V	Gate Charge (Qg):	7.8 NC @ 5V
Input Capacitance (Ciss):	1.081 NF	Operating Temperature:	-55°C To +175°C
Type:	N-channel	Output Capacitance (Coss):	118 PF

Product Model:	BUK9K35-60E,115
Quantity:	2 N-channel
Drain-Source Voltage (Vdss):	60V
Continuous Drain Current (Id):	22A
On-Resistance (RDS(on)):	35mΩ@5V
Power Dissipation (Pd):	38W
Threshold Voltage (Vgs(th)):	2.1V
Gate Charge (Qg):	7.8 NC @ 5V
Input Capacitance (Ciss):	1.081 NF
Operating Temperature:	-55°C To +175°C
Type:	N-channel
Output Capacitance (Coss):	118 PF

The BUK9K35-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.

Product Overview
Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to AEC Q101 standards, this product is suitable for high-performance automotive applications.

Product Features

Dual MOSFET
Compliant with Q101 standard
Features repeatable avalanche rating
Rated for temperatures up to 175°C, suitable for demanding thermal environments
True logic-level gate with VGS(th) rating exceeding 0.5 V at 175°C

Applications

12 V automotive systems
Motor, lighting and solenoid control
Transmission control
Ultra-high-performance power switching

See Details Images-Contact us for send

SHENZHEN QINGFENGYUAN TECHNOLOGY CO.,LTD.

If you see this description on the product, it proves that the product TPS7333QDR is currently in stock, and you can send an inquiry with the quantity to ask for the specific price. If you need one-stop BOM Kitting service order, we also welcome.Just send BOM to us we will make quote for you.

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Q7: How to ensure the safe transportation of goods for such a small and sophisticated product. A7: In the packaging stage, we will pack the products one by one to ensure that there is no room for each product to shake, and then make a reinforced package for the whole, so that the whole package is safe and transportable.

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Q9:What if the goods damaged or want to be returned? A9:We have a quality guarantee period of 90-180 days. During this period, product damage can be returned or repaired for free, you will be guaranteed on . If you bought the wrong product and want to return or exchange it, we also support it. You only need to pay the shipping cost of the returned product, and we will bear the rest to help you.

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The BUK9K35-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.

dual logic-level N-channel MOSFET

TrenchMOS technology MOSFET

LFPAK56D automotive MOSFET

Product Overview Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to AEC Q101 standards, this product is suitable for high-performance automotive applications.

Product Features

Dual MOSFET Compliant with Q101 standard Features repeatable avalanche rating Rated for temperatures up to 175°C, suitable for demanding thermal environments True logic-level gate with VGS(th) rating exceeding 0.5 V at 175°C

Applications

12 V automotive systems Motor, lighting and solenoid control Transmission control Ultra-high-performance power switching

IRFP90N20D Diode Triode Transistor,

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Electronic Components ICs

ST ICS

RENESAS IC

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Product Overview
Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to AEC Q101 standards, this product is suitable for high-performance automotive applications.

Dual MOSFET
Compliant with Q101 standard
Features repeatable avalanche rating
Rated for temperatures up to 175°C, suitable for demanding thermal environments
True logic-level gate with VGS(th) rating exceeding 0.5 V at 175°C

12 V automotive systems
Motor, lighting and solenoid control
Transmission control
Ultra-high-performance power switching