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IRFP90N20D Diode Triode Transistor Through Hole Mounting 600V 120A 378W

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July 28, 2023
Category Connection: Diode Triode Transistor
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#IRFP90N20D Diode Triode Transistor #Diode Triode Transistor Through Hole Mounting #200V 50A Diode Triode Transistor
Brief: Discover the IRFP90N20D Diode Triode Transistor, a high-performance MOSFET with through-hole mounting. Featuring a 600V drain-source breakdown voltage, 120A continuous drain current, and 378W power dissipation, this N-Channel transistor is ideal for robust electronic applications. Learn about its key features and benefits in this detailed overview.
Related Product Features:
  • N-Channel MOSFET with a 600V drain-source breakdown voltage for high-power applications.
  • Continuous drain current of 120A ensures reliable performance under heavy loads.
  • Power dissipation of 378W for efficient energy management.
  • Through-hole mounting style for secure and easy installation.
  • TO-220-3 package case provides durability and heat resistance.
  • Gate-source voltage range of -30V to +30V for versatile use.
  • Low drain-source resistance of 730 mOhms enhances efficiency.
  • Operating temperature range from -55°C to +150°C for extreme conditions.
Faqs:
  • What is the maximum drain-source voltage for the IRFP90N20D transistor?
    The IRFP90N20D transistor has a maximum drain-source voltage of 600V, making it suitable for high-voltage applications.
  • What is the continuous drain current rating of the IRFP90N20D?
    The IRFP90N20D can handle a continuous drain current of up to 120A, ensuring robust performance in demanding circuits.
  • What is the power dissipation capability of the IRFP90N20D?
    The IRFP90N20D has a power dissipation rating of 378W, allowing it to manage high power levels efficiently.
  • What is the operating temperature range of the IRFP90N20D?
    The IRFP90N20D operates effectively within a temperature range of -55°C to +150°C, making it suitable for extreme environments.
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