Brief: Discover the SI2302ADS-T1-E3 Vishay IC, a high-performance N-Channel MOSFET in a compact SOT-223 package. Ideal for surface mount applications, this obsolete yet reliable component offers a drain-to-source voltage of 20V and continuous drain current of 2.1A. Perfect for industrial and consumer electronics.
Related Product Features:
N-Channel MOSFET with 20V drain-to-source voltage.
Continuous drain current of 2.1A at 25°C.
Low Rds On of 60mOhm @ 3.6A, 4.5V.
Compact SOT-223 surface mount package.
Wide operating temperature range from -55°C to 150°C.
Gate charge of 10 nC @ 4.5 V for efficient switching.
Input capacitance of 300 pF @ 10 V.
Power dissipation up to 700mW (Ta).
Faqs:
What is the maximum drain-to-source voltage for the SI2302ADS-T1-E3?
The maximum drain-to-source voltage is 20V.
What is the continuous drain current rating of this MOSFET?
The continuous drain current is 2.1A at 25°C.
Is the SI2302ADS-T1-E3 still in production?
No, this product is listed as obsolete but may still be available in stock.
What is the typical application for this MOSFET?
It is commonly used in power management, switching circuits, and various industrial and consumer electronics applications.